| 图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FF17MR12W1M1HB11BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
3,085 |
|
规格书 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
|
FS33MR12W1M1HB11BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
3,755 |
|
规格书 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
|
FF8MR12W1M1HS4PB11BPSA1MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies |
4,216 |
|
规格书 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 100A (Tj) | 8.1mOhm @ 100A, 18V | 5.15V @ 40mA | 297nC @ 18V | 8800pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
|
F3L8MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V 85A AG-EASY2B Infineon Technologies |
2,801 |
|
规格书 |
EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 85A (Tj) | 12mOhm @ 100A, 18V | 5.15V @ 40mA | 297nC @ 18V | 8800pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY2B |
|
FS13MR12W2M1HB70BPSA1MOSFET 6N-CH 1200V 62.5A Infineon Technologies |
4,356 |
|
规格书 |
CoolSiC™ | - | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 62.5A (Tc) | 11.7mOhm @ 62.5A, 18V | 5.15V @ 28mA | 200nC @ 18V | 6050pF @ 800V | - | - | - | - | - | - |
|
FF6MR12KM1HHPSA1MOSFET Infineon Technologies |
2,067 |
|
规格书 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FS55MR12W1M1HB11NPSA1MOSFET 6N-CH 1200V 15A AG-EASY1B Infineon Technologies |
3,744 |
|
规格书 |
EasyPACK™, CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 15A (Tj) | 79mOhm @ 15A, 18V | 5.15V @ 6mA | 45nC @ 18V | 1350pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
|
FF2MR12W3M1HB11BPSA1MOSFET 4N-CH 1200V AG-EASY3B Infineon Technologies |
1,998 |
|
规格书 |
EasyPACK™, CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 400A (Tj) | 2.27mOhm @ 400A, 18V | 5.15V @ 224mA | 1600nC @ 18V | 48400pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY3B |
|
FS03MR12A6MA1LBBPSA1MOSFET 6N-CH 1200V AG-HYBRIDD Infineon Technologies |
2,547 |
|
规格书 |
HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 400A | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42500pF @ 600V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-HYBRIDD-2 |
|
DF16MR12W1M1HFB67BPSA1MOSFET 2N-CH 1200V 25A Infineon Technologies |
4,885 |
|
规格书 |
EasyPACK™, CoolSiC™ | - | Tray | Active | - | 2 N-Channel | - | 1200V (1.2kV) | 25A | 32.3mOhm @ 25A, 18V | 5.15V @ 10mA | 74nC @ 18V | 2200pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |