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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
2N7002DWH6327XTSA1

2N7002DWH6327XTSA1

MOSFET 2N-CH 60V 0.3A SOT363

Infineon Technologies

48,669
2N7002DWH6327XTSA1

规格书

OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 300mA 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.6nC @ 10V 20pF @ 25V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
BSD840NH6327XTSA1

BSD840NH6327XTSA1

MOSFET 2N-CH 20V 0.88A SOT363

Infineon Technologies

50,426
BSD840NH6327XTSA1

规格书

OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 880mA 400mOhm @ 880mA, 2.5V 750mV @ 1.6µA 0.26nC @ 2.5V 78pF @ 10V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
IRF9389TRPBF

IRF9389TRPBF

MOSFET N/P-CH 30V 6.8A/4.6A 8SO

Infineon Technologies

22,273
IRF9389TRPBF

规格书

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 6.8A, 4.6A 27mOhm @ 6.8A, 10V 2.3V @ 10µA 14nC @ 10V 398pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRLHS6376TRPBF

IRLHS6376TRPBF

MOSFET 2N-CH 30V 3.6A PQFN

Infineon Technologies

122,321
IRLHS6376TRPBF

规格书

HEXFET® 6-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63mOhm @ 3.4A, 4.5V 1.1V @ 10µA 2.8nC @ 4.5V 270pF @ 25V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN Dual (2x2)
IRF7503TRPBF

IRF7503TRPBF

MOSFET 2N-CH 30V 2.4A MICRO8

Infineon Technologies

87,699
IRF7503TRPBF

规格书

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 2.4A 135mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
IRF7103TRPBF

IRF7103TRPBF

MOSFET 2N-CH 50V 3A 8SO

Infineon Technologies

7,628
IRF7103TRPBF

规格书

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 3A 130mOhm @ 3A, 10V 3V @ 250µA 30nC @ 10V 290pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7509TRPBF

IRF7509TRPBF

MOSFET N/P-CH 30V 2.7A/2A MICRO8

Infineon Technologies

1,102
IRF7509TRPBF

规格书

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 2.7A, 2A 110mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
IRF7309TRPBF

IRF7309TRPBF

MOSFET N/P-CH 30V 4A/3A 8SO

Infineon Technologies

17,674
IRF7309TRPBF

规格书

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 4A, 3A 50mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 4.5V 520pF @ 15V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7313TRPBF

IRF7313TRPBF

MOSFET 2N-CH 30V 6.5A 8SO

Infineon Technologies

7,155
IRF7313TRPBF

规格书

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6.5A 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7306TRPBF

IRF7306TRPBF

MOSFET 2P-CH 30V 3.6A 8SO

Infineon Technologies

16,544
IRF7306TRPBF

规格书

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 3.6A 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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