通胜兴电子!国内领先的综合性、专业化的电子元器件独立分销商!
制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
IPG20N06S415AATMA1

IPG20N06S415AATMA1

MOSFET 2N-CH 60V 20A 8TDSON

Infineon Technologies

1,309
IPG20N06S415AATMA1

规格书

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 20A 15.5mOhm @ 17A, 10V 4V @ 20µA 29nC @ 10V 2260pF @ 25V 50W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
IPG20N04S408BATMA1

IPG20N04S408BATMA1

MOSFET 2N-CH 40V 20A 8TDSON

Infineon Technologies

4,668
IPG20N04S408BATMA1

规格书

OptiMOS™ T2 8-PowerVDFN Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A (Tc) 7.6mOhm @ 17A, 10V 4V @ 30µA 36nC @ 10V 2940pF @ 25V 65W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
IPG20N04S408AATMA1

IPG20N04S408AATMA1

MOSFET 2N-CH 40V 20A 8TDSON

Infineon Technologies

4,071
IPG20N04S408AATMA1

规格书

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A 7.6mOhm @ 17A, 10V 4V @ 30µA 36nC @ 10V 2940pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
AUIRFN8459TR

AUIRFN8459TR

MOSFET 2N-CH 40V 50A PQFN

Infineon Technologies

10,414
AUIRFN8459TR

规格书

HEXFET® 8-PowerTDFN Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 50A 5.9mOhm @ 40A, 10V 3.9V @ 50µA 60nC @ 10V 2250pF @ 25V 50W -55°C ~ 175°C (TJ) - - Surface Mount PQFN (5x6)
IRF3546MTRPBF

IRF3546MTRPBF

MOSFET 4N-CH 25V 16A 41QFN

Infineon Technologies

3,435
IRF3546MTRPBF

规格书

- 41-PowerVFQFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 25V 16A (Tc), 20A (Tc) 3.9mOhm @ 27A, 10V 2.1V @ 35µA 15nC @ 4.5V 1310pF @ 13V - -40°C ~ 150°C (TJ) - - Surface Mount 41-PQFN (6x8)
AUIRF7316QTR

AUIRF7316QTR

MOSFET 2P-CH 30V 8SOIC

Infineon Technologies

298
AUIRF7316QTR

规格书

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V - 58mOhm @ 4.9A, 10V 3V @ 250µA 34nC @ 10V 710pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FF45MR12W1M1B11BOMA1

FF45MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

6,317
FF45MR12W1M1B11BOMA1

规格书

CoolSiC™+ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
DF23MR12W1M1PB11BPSA1

DF23MR12W1M1PB11BPSA1

MOSFET 2N-CH 1200V 25A AG-EASY1B

Infineon Technologies

3,690
DF23MR12W1M1PB11BPSA1

规格书

EasyPACK™ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V 50A MODULE

Infineon Technologies

246
FF23MR12W1M1B11BOMA1

规格书

CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 50A 23mOhm @ 50A, 15V 5.55V @ 20mA 125nC @ 15V 3950pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
FS45MR12W1M1B11BOMA1

FS45MR12W1M1B11BOMA1

MOSFET 6N-CH 1200V AG-EASY1BM-2

Infineon Technologies

101
FS45MR12W1M1B11BOMA1

规格书

CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
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