通胜兴电子!国内领先的综合性、专业化的电子元器件独立分销商!
制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FF11MR12W1M1PB11BPSA1

FF11MR12W1M1PB11BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

1,748
FF11MR12W1M1PB11BPSA1

规格书

EasyDUAL™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
FF6MR12KM1BOSA1

FF6MR12KM1BOSA1

MOSFET 2N-CH 1200V 250A AG-62MM

Infineon Technologies

9,163
FF6MR12KM1BOSA1

规格书

CoolSiC™ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 250A (Tc) 5.81mOhm @ 250A, 15V 5.15V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
BSO4804HUMA2

BSO4804HUMA2

MOSFET 2N-CH 30V 8A 8DSO

Infineon Technologies

8,866
BSO4804HUMA2

规格书

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A (Ta) 20mOhm @ 8A, 10V 2V @ 30µA 17nC @ 5V 870pF @ 25V 2W -55°C ~ 150°C - - Surface Mount PG-DSO-8
IRF6802SDTRPBF

IRF6802SDTRPBF

IRF6802 - 12V-300V N-CHANNEL POW

Infineon Technologies

4,800
IRF6802SDTRPBF

规格书

* - Bulk Active - - - - - - - - - - - - - - -
FD1400R12IP4DBOSA1

FD1400R12IP4DBOSA1

MOSFET

Infineon Technologies

2,802
FD1400R12IP4DBOSA1

规格书

* - Bulk Active - - - - - - - - - - - - - - -
FF08MR12W1MA1B11ABPSA1

FF08MR12W1MA1B11ABPSA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

3,173
FF08MR12W1MA1B11ABPSA1

规格书

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 150A (Tj) 9.8mOhm @ 150A, 15V 5.55V @ 90mA 450nC @ 15V 16000pF @ 600V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
FF2MR12KM1HPHPSA1

FF2MR12KM1HPHPSA1

MOSFET 2N-CH 1200V AG-62MMHB

Infineon Technologies

1,624
FF2MR12KM1HPHPSA1

规格书

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V 39700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MMHB
FF4MR20KM1HHPSA1

FF4MR20KM1HHPSA1

MOSFET 2N-CH 2000V AG-62MMHB

Infineon Technologies

2,774
FF4MR20KM1HHPSA1

规格书

C Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 2000V (2kV) 280A (Tc) 5.3mOhm @ 300A, 18V 5.15V @ 168mA 1170nC @ 18V 36100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
FS05MR12A6MA1BBPSA1

FS05MR12A6MA1BBPSA1

MOSFET 1200V 200A AG-HYBRIDD

Infineon Technologies

3,318
FS05MR12A6MA1BBPSA1

规格书

HybridPACK™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) 200A - - - - - - - - Chassis Mount AG-HYBRIDD-2
FS03MR12A6MA1BBPSA1

FS03MR12A6MA1BBPSA1

MOSFET 6N-CH 1200V AG-HYBRIDD

Infineon Technologies

1,949
FS03MR12A6MA1BBPSA1

规格书

HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 400A (Tj) 3.7mOhm @ 400A, 15V 5.55V @ 240mA 1320nC @ 15V 42500pF @ 600V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-HYBRIDD-2
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