通胜兴电子!国内领先的综合性、专业化的电子元器件独立分销商!
制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FF6MR12W2M1HB11BPSA1

FF6MR12W2M1HB11BPSA1

MOSFET 2N-CH 1200V 145A MODULE

Infineon Technologies

3,474
FF6MR12W2M1HB11BPSA1

规格书

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 145A (Tj) 5.4mOhm @ 150A, 18V 5.15V @ 60mA 446nC @ 18V 13200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
FS13MR12W2M1HPB11BPSA1

FS13MR12W2M1HPB11BPSA1

MOSFET

Infineon Technologies

3,456
FS13MR12W2M1HPB11BPSA1

规格书

- - Tray Active - - - - - - - - - - - - - - -
FF4MR12W2M1HPB11BPSA1

FF4MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V AG-EASY2B

Infineon Technologies

1,218
FF4MR12W2M1HPB11BPSA1

规格书

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
F411MR12W2M1HPB76BPSA1

F411MR12W2M1HPB76BPSA1

MOSFET

Infineon Technologies

2,279
F411MR12W2M1HPB76BPSA1

规格书

- - Tray Active - - - - - - - - - - - - - - -
FF6MR12KM1HPHPSA1

FF6MR12KM1HPHPSA1

MOSFET

Infineon Technologies

1,384
FF6MR12KM1HPHPSA1

规格书

- - Tray Active - - - - - - - - - - - - - - -
FF6MR20W2M1HB70BPSA1

FF6MR20W2M1HB70BPSA1

FF6MR20W2M1HB70BPSA1

Infineon Technologies

3,274
FF6MR20W2M1HB70BPSA1

规格书

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2000V (2kV) 160A (Tj) 8.1mOhm @ 160A, 18V 5.15V @ 112mA 780nC @ 3V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
F3L6MR20W2M1HB70BPSA1

F3L6MR20W2M1HB70BPSA1

F3L6MR20W2M1HB70BPSA1

Infineon Technologies

1,064
F3L6MR20W2M1HB70BPSA1

规格书

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 4 N-Channel Silicon Carbide (SiC) 2000V (2kV) 155A (Tj) 8.7mOhm @ 100A, 18V 5.15V @ 112mA 297nC @ 18V 24100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount -
FF3MR12KM1HHPSA1

FF3MR12KM1HHPSA1

MOSFET 2N-CH 1200V 190A AG62MMHB

Infineon Technologies

3,528
FF3MR12KM1HHPSA1

规格书

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 190A (Tc) 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
FF3MR12KM1HPHPSA1

FF3MR12KM1HPHPSA1

MOSFET 2N-CH 1200V 220A AG62MMHB

Infineon Technologies

4,318
FF3MR12KM1HPHPSA1

规格书

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 220A 4.44mOhm @ 280A, 18V 5.1V @ 112mA 800nC @ 18V 24200pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
FF5MR20KM1HHPSA1

FF5MR20KM1HHPSA1

MOSFET

Infineon Technologies

3,972
FF5MR20KM1HHPSA1

规格书

- - Tray Active - - - - - - - - - - - - - - -
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