通胜兴电子!国内领先的综合性、专业化的电子元器件独立分销商!
制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FF4MR20KM1HPHPSA1

FF4MR20KM1HPHPSA1

MOSFET 2N-CH 2000V AG-62MMHB

Infineon Technologies

1,522
FF4MR20KM1HPHPSA1

规格书

C, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 2000V (2kV) 280A (Tc) 5.3mOhm @ 300A, 18V 5.15V @ 168mA 1170nC @ 18V 36100pF @ 1.2kV - -40°C ~ 175°C - - Chassis Mount AG-62MMHB
FF1MR12KM1HHPSA1

FF1MR12KM1HHPSA1

MOSFET

Infineon Technologies

4,991
FF1MR12KM1HHPSA1

规格书

- - Tray Active - - - - - - - - - - - - - - -
FF1MR12KM1HPHPSA1

FF1MR12KM1HPHPSA1

MOSFET

Infineon Technologies

1,179
FF1MR12KM1HPHPSA1

规格书

- - Tray Active - - - - - - - - - - - - - - -
IPB13N03LBG

IPB13N03LBG

MOSFET N-CH

Infineon Technologies

999

-

* - Bulk Active - - - - - - - - - - - - - - -
DF23MR12W1M1B11BPSA1

DF23MR12W1M1B11BPSA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

1,133
DF23MR12W1M1B11BPSA1

规格书

CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
F423MR12W1M1PB11BPSA1

F423MR12W1M1PB11BPSA1

MOSFET 4N-CH 1200V 50A AG-EASY1B

Infineon Technologies

1,797
F423MR12W1M1PB11BPSA1

规格书

EasyPACK™ Module Tray Obsolete MOSFET (Metal Oxide) 4 N-Channel - 1200V (1.2kV) 50A 22.5mOhm @ 50A, 15V 5.5V @ 20mA 124nC @ 15V 3.68nF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
F411MR12W2M1B76BOMA1

F411MR12W2M1B76BOMA1

MOSFET 4N-CH 1200V AG-EASY1B

Infineon Technologies

8,563

-

EasyPACK™ CoolSiC™ Module Bulk Obsolete Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V 7360pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
FF2MR12KM1HOSA1

FF2MR12KM1HOSA1

MOSFET 2N-CH 1200V 500A AG-62MM

Infineon Technologies

1,947
FF2MR12KM1HOSA1

规格书

CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V 39700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
FF4MR12W2M1HB11BPSA1

FF4MR12W2M1HB11BPSA1

MOSFET 2N-CH 1200V 170A MODULE

Infineon Technologies

6,293
FF4MR12W2M1HB11BPSA1

规格书

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 170A (Tj) 4mOhm @ 200A, 18V 5.15V @ 80mA 594nC @ 18V 17600pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
FS02MR12A8MA2BBPSA1

FS02MR12A8MA2BBPSA1

MOSFET 6N-CH 1200V 390A

Infineon Technologies

2,141

-

HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 390A (Tj) 1.9mOhm @ 390A, 18V 4.55V @ 160mA 1.19µC @ 18V 34500pF @ 750V - -40°C ~ 175°C (TJ) - - Chassis Mount -
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