通胜兴电子!国内领先的综合性、专业化的电子元器件独立分销商!
制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
ISG0613N04NM6HATMA1

ISG0613N04NM6HATMA1

MOSFET 2N-CH 40V 42A 10VITFN

Infineon Technologies

3,000
ISG0613N04NM6HATMA1

规格书

OptiMOS™ 6 10-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 42A (Ta), 299A (Tc) 0.88mOhm @ 50A, 10V 2.8V @ 780µA 104nC @ 10V 6200pF @ 20V 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-VITFN-10-1
ISG0614N06NM5HATMA1

ISG0614N06NM5HATMA1

MOSFET 2N-CH 60V 31A 10VITFN

Infineon Technologies

2,976
ISG0614N06NM5HATMA1

规格书

OptiMOS™ 5 10-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 60V 31A (Ta), 233A (Tc) 1.6mOhm @ 50A, 10V 3.3V @ 86µA 102nC @ 10V 6400pF @ 30V 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-VITFN-10-1
ISG0613N04NM6HSCATMA1

ISG0613N04NM6HSCATMA1

MOSFET 2N-CH 40V 42A 10WHITFN

Infineon Technologies

2,990
ISG0613N04NM6HSCATMA1

规格书

OptiMOS™ 6 10-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 42A (Ta), 299A (Tc) 0.88mOhm @ 50A, 10V 2.8V @ 780µA 104nC @ 10V 6200pF @ 20V 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHITFN-10-1
ISG0614N06NM5HSCATMA1

ISG0614N06NM5HSCATMA1

MOSFET 2N-CH 60V 31A 10WHITFN

Infineon Technologies

2,990
ISG0614N06NM5HSCATMA1

规格书

OptiMOS™ 5 10-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 60V 31A (Ta), 233A (Tc) 1.6mOhm @ 50A, 10V 3.3V @ 86µA 102nC @ 10V 6400pF @ 30V 3W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHITFN-10-1
IAUTN08S5N012LATMA1

IAUTN08S5N012LATMA1

MOSFET 2N-CH 80V 300A PG-HSOF

Infineon Technologies

1,956
IAUTN08S5N012LATMA1

规格书

OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel, Common Drain, Common Source - 80V 300A (Tj) 1.15mOhm @ 100A, 10V 3.3V @ 275µA 24nC @ 10V 15340pF @ 40V 375W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOF-8-2
F435MR07W1D7S8B11ABPSA1

F435MR07W1D7S8B11ABPSA1

MOSFET 4N-CH 650V 35A MODULE

Infineon Technologies

3,382
F435MR07W1D7S8B11ABPSA1

规格书

EasyPACK™ 1B Module Tray Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 650V 35A 39.4mOhm @ 35A, 10V 4.45V @ 1.74mA 141nC @ 10V 6950pF @ 400V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
FF33MR12W1M1HPB11BPSA1

FF33MR12W1M1HPB11BPSA1

MOSFET

Infineon Technologies

2,478
FF33MR12W1M1HPB11BPSA1

规格书

- - Tray Active - - - - - - - - - - - - - - -
DF11MR12W1M1HFB67BPSA1

DF11MR12W1M1HFB67BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

1,356
DF11MR12W1M1HFB67BPSA1

规格书

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
BSO211PHXUMA1

BSO211PHXUMA1

MOSFET 2P-CH 20V 4A 8DSO

Infineon Technologies

2,949
BSO211PHXUMA1

规格书

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4A 67mOhm @ 4.6A, 4.5V 1.2V @ 25µA 10nC @ 4.5V 1095pF @ 15V 1.6W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
IRF7316GTRPBF

IRF7316GTRPBF

MOSFET 2P-CH 30V 4.9A 8SO

Infineon Technologies

2,290
IRF7316GTRPBF

规格书

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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