图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SCS206AMCDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
9,883 |
|
![]() 规格书 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS306APC9DIODE SILICON CARBIDE 650V 6A Rohm Semiconductor |
4,796 |
|
![]() 规格书 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
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SCS304AMCDIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor |
5,166 |
|
![]() 规格书 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS215AECDIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor |
7,941 |
|
![]() 规格书 |
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C (Max) |
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SCS215AGHRCDIODE SIL CARB 650V 15A TO220AC Rohm Semiconductor |
6,299 |
|
![]() 规格书 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
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SCS220AGCDIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor |
9,565 |
|
![]() 规格书 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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SCS208AMCDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
7,856 |
|
![]() 规格书 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 291pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS306AMCDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
6,403 |
|
![]() 规格书 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS220AECDIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor |
2,874 |
|
![]() 规格书 |
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C (Max) |
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SCS220AGHRCDIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor |
5,973 |
|
![]() 规格书 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |