图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANS1N6642UB2RDIODE GEN PURP B SQ-MELF Microchip Technology |
8,740 |
|
- |
- | SQ-MELF, B | Bulk | Active | Standard, Reverse Polarity | - | - | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | - | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | B, SQ-MELF | - |
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JANS1N6642UB2R/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
7,964 |
|
- |
- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | UB2 | -65°C ~ 175°C |
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JANS1N6642UB2/TRSIGNAL OR COMPUTER DIODE Microchip Technology |
3,600 |
|
- |
- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Standard | 75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | Military | MIL-PRF-19500/578 | Surface Mount | UB2 | -65°C ~ 175°C |
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1N6651RECTIFIER DIODE Microchip Technology |
3,994 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
JANS1N5552DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
6,589 |
|
![]() 规格书 |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANS1N5550DIODE GEN PURP 200V 5A B AXIAL Microchip Technology |
2,604 |
|
- |
- | B, Axial | Bulk | Active | Standard | 200 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANS1N5551DIODE GEN PURP 400V 5A B AXIAL Microchip Technology |
7,254 |
|
- |
- | B, Axial | Bulk | Active | Standard | 400 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANS1N5553DIODE GEN PURP 800V 5A B AXIAL Microchip Technology |
2,456 |
|
- |
- | B, Axial | Bulk | Active | Standard | 800 V | 5A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANS1N5554DIODE GEN PURP 5A B AXIAL Microchip Technology |
4,520 |
|
- |
- | B, Axial | Bulk | Active | Standard | - | 5A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANS1N5553/TRDIODE GEN PURP 800V 5A B AXIAL Microchip Technology |
5,232 |
|
![]() 规格书 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 5A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |