图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANS1N5416DIODE GEN PURP 100V 3A B AXIAL Microchip Technology |
5,247 |
|
- |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANS1N5417DIODE GEN PURP 200V 3A B AXIAL Microchip Technology |
9,176 |
|
- |
- | B, Axial | Bulk | Active | Standard | 200 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANS1N5419DIODE GEN PURP 500V 3A B AXIAL Microchip Technology |
4,141 |
|
- |
- | B, Axial | Bulk | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | - | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANS1N5420/TRDIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
7,178 |
|
![]() 规格书 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | - | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JAN1N5822DIODE SCHOTTKY 40V 3A AXIAL Microchip Technology |
5,469 |
|
![]() 规格书 |
- | B, Axial | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Military | MIL-PRF-19500/620 | Through Hole | B, Axial | -65°C ~ 125°C |
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S3520PFRECTIFIER Microchip Technology |
3,809 |
|
![]() 规格书 |
S35PF | DO-208AA | Bulk | Active | Standard | 200 V | 35A | 1.1 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | - | - | Press Fit | DO-21 | -40°C ~ 175°C |
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S3540PFDIODE GEN PURP 400V 35A DO21 Microchip Technology |
8,638 |
|
![]() 规格书 |
- | DO-208AA | Bulk | Active | Standard | 400 V | 35A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | - | - | Press Fit | DO-21 | -55°C ~ 175°C |
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S3560PFDIODE GEN PURP 600V 35A DO21 Microchip Technology |
5,766 |
|
![]() 规格书 |
- | DO-208AA | Bulk | Active | Standard | 600 V | 35A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | - | - | - | Press Fit | DO-21 | -55°C ~ 175°C |
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JANS1N5615USDIODE GEN PURP 200V 1A A SQ-MELF Microchip Technology |
8,915 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Military | MIL-PRF-19500/429 | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
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JANS1N5418/TRDIODE GEN PURP 400V 3A Microchip Technology |
9,278 |
|
![]() 规格书 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | 165pF @ 4V | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |