IGBT 阵列

型号	库存	价格	数量	规格书	系列	封装/外壳	包装	产品状态	IGBT 类型	配置	电压 - 集电极发射极击穿（最大值）	电流 - 集电极 (Ic)（最大值）	功率 - 最大值	导通电压 (Vce(on)）（最大值）@ Vge, Ic	电流 - 集电极截止（最大值）	输入电容 (Cies) @ Vce	输入	NTC 热敏电阻	工作温度	安装类型	供应商设备封装
IXA30PG1200DHG-TUB IGBT H BRIDGE 1200V 43A SMPD IXYS	4,530	-	立即询价	规格书	-	9-SMD Module	Tube	Active	PT	Half Bridge	1200 V	43 A	150 W	2.2V @ 15V, 25A	2.1 mA	-	Standard	No	-55°C ~ 150°C (TJ)	Surface Mount	ISOPLUS-SMPD™.B
IXA40PG1200DHG-TRR IGBT H BRIDGE 1200V 63A SMPD IXYS	9,156	-	立即询价	规格书	-	9-SMD Module	Tape & Reel (TR)	Active	PT	Half Bridge	1200 V	63 A	230 W	2.15V @ 15V, 35A	150 µA	-	Standard	No	-55°C ~ 150°C (TJ)	Surface Mount	ISOPLUS-SMPD™.B
IXA40PG1200DHG-TUB IGBT H BRIDGE 1200V 63A SMPD IXYS	6,188	-	立即询价	规格书	-	9-SMD Module	Tube	Active	PT	Half Bridge	1200 V	63 A	230 W	2.15V @ 15V, 35A	150 µA	-	Standard	No	-55°C ~ 150°C (TJ)	Surface Mount	ISOPLUS-SMPD™.B
FII24N17AH1 IGBT H BRIDGE 1700V 18A I4PAK5 IXYS	9,474	-	立即询价	规格书	-	i4-Pac™-5	Box	Active	NPT	Half Bridge	1700 V	18 A	140 W	6V @ 15V, 16A	100 µA	2.4 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™
FII24N17AH1S IGBT H BRIDGE 1700V 18A I4PAK5 IXYS	2,808	-	立即询价	-	-	i4-Pac™-5	Box	Active	NPT	Half Bridge	1700 V	18 A	140 W	6V @ 15V, 16A	100 µA	2.4 nF @ 25 V	Standard	No	-	Through Hole	ISOPLUS i4-PAC™
FII30-12E IGBT H BRIDGE 1200V 33A I4PAK5 IXYS	7,617	-	立即询价	规格书	-	i4-Pac™-5	Tube	Obsolete	NPT	Half Bridge	1200 V	33 A	150 W	2.9V @ 15V, 20A	200 µA	1.2 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™
FII50-12E IGBT H BRIDGE 1200V 50A I4PAK5 IXYS	3,663	-	立即询价	规格书	-	i4-Pac™-5	Tube	Obsolete	NPT	Half Bridge	1200 V	50 A	200 W	2.6V @ 15V, 30A	400 µA	2 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™
FII24N170AH1 IGBT H BRIDGE 1700V 18A I4PAK5 IXYS	9,465	-	立即询价	规格书	-	i4-Pac™-4, Isolated	Tube	Obsolete	NPT	Half Bridge	1700 V	18 A	140 W	6V @ 15V, 16A	100 µA	2.4 nF @ 25 V	Standard	No	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS i4-PAC™