通胜兴电子！国内领先的综合性、专业化的电子元器件独立分销商！
13360502897
BOM
购物车| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
场效应晶体管（FETs）、MOSFETs
| 图片 | 型号 | 库存 | 价格 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RCJ510N25TLMOSFET N-CH 250V 51A LPTS Rohm Semiconductor |
4,965 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 51A (Tc) | 10V | 65mOhm @ 25.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 7000 pF @ 25 V | - | 1.56W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTS |
|
RJ1P12BBDTLLMOSFET N-CH 100V 120A LPTL Rohm Semiconductor |
848 | - |
|
规格书 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 5.8mOhm @ 50A, 10V | 4V @ 2.5mA | 80 nC @ 10 V | ±20V | 4170 pF @ 50 V | - | 178W (Tc) | 150°C (TJ) | - | - | Surface Mount | LPTL |
|
R6520ENXC7G650V 20A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
958 | - |
|
规格书 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 4V @ 630µA | 61 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 68W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
|
R6055VNZ4C13600V 55A TO-247, PRESTOMOS WITH Rohm Semiconductor |
586 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 55A (Tc) | 10V, 15V | 71mOhm @ 16A, 15V | 6.5V @ 1.5mA | 80 nC @ 10 V | ±30V | 3700 pF @ 100 V | - | 543W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
SCT3120ALHRC11SICFET N-CH 650V 21A TO247N Rohm Semiconductor |
2,204 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | 18V | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38 nC @ 18 V | +22V, -4V | 460 pF @ 500 V | - | 103W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
|
R6070JNZ4C13600V 70A TO-247, PRESTOMOS WITH Rohm Semiconductor |
550 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 15V | 58mOhm @ 35A, 15V | 7V @ 3mA | 165 nC @ 15 V | ±30V | 6000 pF @ 100 V | - | 770W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
|
|
SCT2280KEGC111200V, 14A, THD, SILICON-CARBIDE Rohm Semiconductor |
1,664 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36 nC @ 18 V | +22V, -6V | 667 pF @ 800 V | - | 108W (Tc) | 175°C | - | - | Through Hole | TO-247N |
|
SCT3120AW7TLSICFET N-CH 650V 21A TO263-7 Rohm Semiconductor |
788 | - |
|
规格书 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 21A (Tc) | - | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38 nC @ 18 V | +22V, -4V | 460 pF @ 500 V | - | 100W | 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
SCT3160KLHRC11SICFET N-CH 1200V 17A TO247N Rohm Semiconductor |
592 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | 103W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
|
|
SCT2450KEHRC111200V, 10A, THD, SILICON-CARBIDE Rohm Semiconductor |
427 | - |
|
规格书 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 18V | 585mOhm @ 3A, 18V | 4V @ 900µA | 27 nC @ 18 V | +22V, -6V | 463 pF @ 800 V | - | 85W (Tc) | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247N |
