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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM120HM16CTBL3NG

MSCSM120HM16CTBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

2,113
MSCSM120HM16CTBL3NG

规格书

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
PJT7808_R2_00001

PJT7808_R2_00001

MOSFET 2N-CH 20V 0.5A SOT363

EMO Inc.

7,006
PJT7808_R2_00001

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 500mA (Ta) 400mOhm @ 500mA, 4.5V 900mV @ 250µA 1.4nC @ 4.5V 67pF @ 10V 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
FF1MR12KM1HP

FF1MR12KM1HP

MOSFET

Infineon Technologies

2,689

-

- - Tray Active - - - - - - - - - - - - - - -
GE17045EEA3

GE17045EEA3

MOSFET 6N-CH 1700V 425A

GE Aerospace

6,428
GE17045EEA3

规格书

SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount -
MSCSM120HM16TBL3NG

MSCSM120HM16TBL3NG

MOSFET 6N-CH 1200V 150A

Microchip Technology

6,075
MSCSM120HM16TBL3NG

规格书

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM16TBL3NG

MSCSM120DDUM16TBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

9,089
MSCSM120DDUM16TBL3NG

规格书

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
DMN5L06VKQ-13

DMN5L06VKQ-13

MOSFET 2N-CH 50V 0.28A SOT563

Diodes Incorporated

9,220
DMN5L06VKQ-13

规格书

- SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 280mA (Ta) 2Ohm @ 50mA, 5V 1V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
IRF8910TRPBF-1

IRF8910TRPBF-1

MOSFET 2N-CH 20V 10A 8SO

Infineon Technologies

8,835

-

HEXFET® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 10A (Ta) 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V 960pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IPG20N06S2L65AAUMA1

IPG20N06S2L65AAUMA1

MOSFET 2N-CH 55V 20A 8TDSON

Infineon Technologies

6,516

-

OptiMOS™ 8-PowerVDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 20A (Tc) 65mOhm @ 15A, 10V 2V @ 14µA 12nC @ 10V 410pF @ 25V 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PG-TDSON-8-10
NTMFD0D9N02P1E

NTMFD0D9N02P1E

MOSFET 2N-CH 30V/25V 14A 8PQFN

onsemi

4,074
NTMFD0D9N02P1E

规格书

- 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V, 25V 14A (Ta), 30A (Ta) 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V 2V @ 340µA, 2V @ 1mA 9nC, 30nC @ 4.5V 1400pF @ 15V, 5050pF @ 13V 960mW (Ta), 1.04W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
GE12050EEA3

GE12050EEA3

MOSFET 6N-CH 1200V 475A MODULE

GE Aerospace

6,824
GE12050EEA3

规格书

SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 475A (Tc) 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount Module
GE17140CEA3

GE17140CEA3

MOSFET 2N-CH 1700V 1.275KA MODUL

GE Aerospace

3,899
GE17140CEA3

规格书

SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 1.275kA - 4.5V @ 480mA 3621nC @ 18V 82nF @ 600V 3.75kW -55°C ~ 150°C (Tc) - - Chassis Mount Module
UM6K1N-TP

UM6K1N-TP

MOSFET 2N-CH 30V 0.1A SOT363

Micro Commercial Co

5,022
UM6K1N-TP

规格书

- 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 100mA 8Ohm @ 10mA, 4V 1.5V @ 100µA - 13pF @ 5V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
2N7002DWL-TP

2N7002DWL-TP

MOSFET 2N-CH 60V 0.115A SOT23-6L

Micro Commercial Co

3,413
2N7002DWL-TP

规格书

- SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 115mA 4.5Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 25V 225mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
SIL6321-TP

SIL6321-TP

MOSFET N/P-CH 30V 1A SOT23-6L

Micro Commercial Co

8,001

-

- SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 1A 320mOhm @ 1A, 10V 1.4V @ 250µA, 1.3V @ 250µA - 1155pF @ 15V, 1050pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
SI3139KDW-TP

SI3139KDW-TP

MOSFET 2P-CH 20V 0.66A SOT363

Micro Commercial Co

3,768

-

- 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 660mA 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 175pF @ 16V 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
SIL3439K-TP

SIL3439K-TP

MOSFET N/P-CH 20V 1.3A SOT23-6L

Micro Commercial Co

8,835

-

- SOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.3A, 1.1A 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V 1.1V @ 250µA - 60pF @ 16V, 175pF @ 16V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
TPC8228-H,LQ

TPC8228-H,LQ

MOSFET 2N-CH 60V 3.8A 8SOP

Toshiba Semiconductor and Storage

6,873
TPC8228-H,LQ

规格书

U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3.8A 57mOhm @ 1.9A, 10V 2.3V @ 100µA 11nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
TPC8227-H,LQ

TPC8227-H,LQ

MOSFET 2N-CH 40V 5.1A 8SOP

Toshiba Semiconductor and Storage

5,861
TPC8227-H,LQ

规格书

U-MOSVI-H 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 5.1A 33mOhm @ 2.6A, 10V 2.3V @ 100µA 10nC @ 10V 640pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 8-SOP
IPG20N06S2L65AUMA1

IPG20N06S2L65AUMA1

MOSFET

Infineon Technologies

6,688

-

- - Bulk Obsolete - - - - - - - - - - - - - - -
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