通胜兴电子!国内领先的综合性、专业化的电子元器件独立分销商!
制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FDMS8025AS

FDMS8025AS

MOSFET N-CH

Fairchild Semiconductor

9,000

-

* - Bulk Active - - - - - - - - - - - - - - -
HP4936DY

HP4936DY

MOSFET 2N-CH 30V 5.8A 8SOIC

Fairchild Semiconductor

1,960
HP4936DY

规格书

- 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.8A (Ta) 37mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 625pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDW2503N

FDW2503N

MOSFET 2N-CH 20V 5.5A 8TSSOP

Fairchild Semiconductor

3,522
FDW2503N

规格书

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 5.5A 21mOhm @ 5.5A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1082pF @ 10V 600mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
FDC6322C

FDC6322C

MOSFET N/P-CH 25V 0.22A SSOT6

Fairchild Semiconductor

364,497
FDC6322C

规格书

- SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 25V 220mA, 460mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.7nC @ 4.5V 9.5pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
FDS6986S

FDS6986S

MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

Fairchild Semiconductor

134,344
FDS6986S

规格书

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.5A, 7.9A 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V 3V @ 250µA, 3V @ 1mA 9nC @ 5V, 16nC @ 5V 695pF @ 10V, 1233pF @ 10V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDMS5361L

FDMS5361L

MOSFET N-CH

Fairchild Semiconductor

3,000

-

* - Bulk Active - - - - - - - - - - - - - - -
HUF76113DK8T

HUF76113DK8T

MOSFET 2N-CH 30V 6A US8

Fairchild Semiconductor

42,500
HUF76113DK8T

规格书

UltraFET® 8-VFSOP (0.091", 2.30mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A (Ta) 32mOhm @ 6A, 10V 3V @ 250µA 19.2nC @ 10V 605pF @ 25V 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount US8
FDS9933BZ

FDS9933BZ

MOSFET 2P-CH 20V 4.9A 8SOIC

Fairchild Semiconductor

8,216
FDS9933BZ

规格书

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.9A 46mOhm @ 4.9A, 4.5V 1.5V @ 250µA 15nC @ 4.5V 985pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDW2507N

FDW2507N

MOSFET 2N-CH 20V 7.5A 8TSSOP

Fairchild Semiconductor

25,937
FDW2507N

规格书

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7.5A 19mOhm @ 7.5A, 4.5V 1.5V @ 250µA 28nC @ 4.5V 2152pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
FDS6892A

FDS6892A

MOSFET 2N-CH 20V 7.5A 8SOIC

Fairchild Semiconductor

54,014
FDS6892A

规格书

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7.5A 18mOhm @ 7.5A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1333pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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