图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE Rohm Semiconductor |
1,339 |
|
![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 120A (Tc) | - | 2.7V @ 22mA | - | 14000pF @ 10V | 780W | -40°C ~ 150°C (TJ) | - | - | - | Module |
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BSM180D12P2E002MOSFET 2N-CH 1200V 204A MODULE Rohm Semiconductor |
4,888 |
|
![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 204A (Tc) | - | 4V @ 35.2mA | - | 18000pF @ 10V | 1360W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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BSM600D12P3G001MOSFET 2N-CH 1200V 600A MODULE Rohm Semiconductor |
4,499 |
|
![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 600A (Tc) | - | 5.6V @ 182mA | - | 31000pF @ 10V | 2450W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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BSM180D12P3C007MOSFET 2N-CH 1200V 180A MODULE Rohm Semiconductor |
1,726 |
|
![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 180A (Tc) | - | 5.6V @ 50mA | - | 900pF @ 10V | 880W | 175°C (TJ) | - | - | Surface Mount | Module |
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BSM400D12P3G002MOSFET 2N-CH 1200V 400A MODULE Rohm Semiconductor |
2,795 |
|
![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 400A (Tc) | - | 5.6V @ 109.2mA | - | 17000pF @ 10V | 1570W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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BSM300D12P3E005MOSFET 2N-CH 1200V 300A MODULE Rohm Semiconductor |
2,281 |
|
![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 300A (Tc) | - | 5.6V @ 91mA | - | 14000pF @ 10V | 1260W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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BSM400D12P2G003MOSFET 2N-CH 1200V 400A MODULE Rohm Semiconductor |
3,122 |
|
![]() 规格书 |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 400A (Tc) | - | 4V @ 85mA | - | 38000pF @ 10V | 2450W (Tc) | -40°C ~ 150°C (TJ) | - | - | - | Module |
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BSM450D12P4G102MOSFET 2N-CH 1200V 447A MODULE Rohm Semiconductor |
3,313 |
|
![]() 规格书 |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 447A (Tc) | - | 4.8V @ 218.4mA | - | 44000pF @ 10V | 1.45kW (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
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EM5K5T2RMOSFET 2N-CH 30V 0.3A EMT5 Rohm Semiconductor |
2,499 |
|
- |
- | 6-SMD (5 Leads), Flat Leads | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 30V | 300mA | 600mOhm @ 300mA, 4.5V | - | - | - | 150mW | - | - | - | Surface Mount | EMT5 |
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SH8M2TB1MOSFET N/P-CH 30V 3.5A 8SOP Rohm Semiconductor |
171 |
|
![]() 规格书 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | N and P-Channel | - | 30V | 3.5A | 83mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | 140pF @ 10V | 2W | 150°C (TJ) | - | - | Surface Mount | 8-SOP |