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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

场效应晶体管(FET)、MOSFET 阵列

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
SSM6N7002KFU,LF

SSM6N7002KFU,LF

MOSFET 2N-CH 60V 0.3A US6

Toshiba Semiconductor and Storage

239,024
SSM6N7002KFU,LF

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 300mA 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 40pF @ 10V 285mW 150°C (TJ) - - Surface Mount US6
2N7002DW-7-F

2N7002DW-7-F

MOSFET 2N-CH 60V 0.23A SOT363

Diodes Incorporated

71,509
2N7002DW-7-F

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 230mA 7.5Ohm @ 50mA, 5V 2V @ 250µA - 50pF @ 25V 310mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
SSM6L56FE,LM

SSM6L56FE,LM

MOSFET N/P-CH 20V 0.8A ES6

Toshiba Semiconductor and Storage

58,717
SSM6L56FE,LM

规格书

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.5V Drive 20V 800mA (Ta) 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 10V 55pF @ 10V, 100pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
SSM6N37FU,LF

SSM6N37FU,LF

MOSFET 2N-CH 20V 0.25A US6

Toshiba Semiconductor and Storage

147,393
SSM6N37FU,LF

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 250mA (Ta) 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - 12pF @ 10V 300mW 150°C - - Surface Mount US6
2N7002DWH6327XTSA1

2N7002DWH6327XTSA1

MOSFET 2N-CH 60V 0.3A SOT363

Infineon Technologies

48,669
2N7002DWH6327XTSA1

规格书

OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 300mA 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.6nC @ 10V 20pF @ 25V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
2N7002BKS,115

2N7002BKS,115

MOSFET 2N-CH 60V 0.3A 6TSSOP

Nexperia USA Inc.

210,623
2N7002BKS,115

规格书

TrenchMOS™ 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 300mA (Ta) 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 50pF @ 10V 295mW 150°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSSOP
DMG1016UDW-7

DMG1016UDW-7

MOSFET N/P-CH 20V SOT363

Diodes Incorporated

26,006
DMG1016UDW-7

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.07A, 845mA 450mOhm @ 600mA, 4.5V 1V @ 250µA 0.74nC @ 4.5V 60.67pF @ 10V 330mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
UM6K33NTN

UM6K33NTN

MOSFET 2N-CH 50V 0.2A UMT6

Rohm Semiconductor

732,443
UM6K33NTN

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 1V @ 1mA - 25pF @ 10V 120mW 150°C (TJ) - - Surface Mount UMT6
DMG6602SVT-7

DMG6602SVT-7

MOSFET N/P-CH 30V 3.4A TSOT26

Diodes Incorporated

95,597
DMG6602SVT-7

规格书

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 4.5V Drive 30V 3.4A, 2.8A 60mOhm @ 3.1A, 10V 2.3V @ 250µA 13nC @ 10V 400pF @ 15V 840mW -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
EM6K34T2CR

EM6K34T2CR

MOSFET 2N-CH 50V 0.2A EMT6

Rohm Semiconductor

158,375
EM6K34T2CR

规格书

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 0.9V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA - 26pF @ 10V 120mW 150°C (TJ) - - Surface Mount EMT6
UM6K34NTCN

UM6K34NTCN

MOSFET 2N-CH 50V 0.2A UMT6

Rohm Semiconductor

67,365
UM6K34NTCN

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 0.9V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA - 26pF @ 10V 120mW 150°C (TJ) - - Surface Mount UMT6
DMG6601LVT-7

DMG6601LVT-7

MOSFET N/P-CH 30V 3.8A TSOT26

Diodes Incorporated

31,149
DMG6601LVT-7

规格书

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 3.8A, 2.5A 55mOhm @ 3.4A, 10V 1.5V @ 250µA 12.3nC @ 10V 422pF @ 15V 850mW -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
BSD840NH6327XTSA1

BSD840NH6327XTSA1

MOSFET 2N-CH 20V 0.88A SOT363

Infineon Technologies

50,426
BSD840NH6327XTSA1

规格书

OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 880mA 400mOhm @ 880mA, 2.5V 750mV @ 1.6µA 0.26nC @ 2.5V 78pF @ 10V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
SSM6L14FE(TE85L,F)

SSM6L14FE(TE85L,F)

MOSFET N/P-CH 20V 0.8A ES6

Toshiba Semiconductor and Storage

27,811
SSM6L14FE(TE85L,F)

规格书

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.5V Drive 20V 800mA (Ta), 720mA (Ta) 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V 1V @ 1mA 2nC @ 4.5V, 1.76nC @ 4.5V 90pF @ 10V, 110pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
NTZD3154NT1G

NTZD3154NT1G

MOSFET 2N-CH 20V 0.54A SOT563

onsemi

416,467
NTZD3154NT1G

规格书

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 540mA 550mOhm @ 540mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 150pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
2N7002DW

2N7002DW

MOSFET 2N-CH 60V 0.115A SC88

onsemi

81,939
2N7002DW

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 115mA 7.5Ohm @ 50mA, 5V 2V @ 250µA - 50pF @ 25V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
NTJD4401NT1G

NTJD4401NT1G

MOSFET 2N-CH 20V 0.63A SC88

onsemi

43,621
NTJD4401NT1G

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 630mA 375mOhm @ 630mA, 4.5V 1.5V @ 250µA 3nC @ 4.5V 46pF @ 20V 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
SSM6L09FUTE85LF

SSM6L09FUTE85LF

MOSFET N/P-CH 30V 0.4A US6

Toshiba Semiconductor and Storage

27,660
SSM6L09FUTE85LF

规格书

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 400mA, 200mA 700mOhm @ 200MA, 10V 1.8V @ 100µA - 20pF @ 5V 300mW 150°C (TJ) - - Surface Mount US6
NTZD3152PT1G

NTZD3152PT1G

MOSFET 2P-CH 20V 0.43A SOT563

onsemi

49,620
NTZD3152PT1G

规格书

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 430mA 900mOhm @ 430mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 175pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
PMDT290UNE,115

PMDT290UNE,115

MOSFET 2N-CH 20V 0.8A SOT666

Nexperia USA Inc.

75,074
PMDT290UNE,115

规格书

TrenchMOS™ SOT-563, SOT-666 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 800mA 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68nC @ 4.5V 83pF @ 10V 500mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-666
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