通胜兴电子!国内领先的综合性、专业化的电子元器件独立分销商!
制造商 系列 封装/外壳 包装 产品状态 电容 @ Vr, F 电容比 电容比条件 电压 - 反向峰值(最大值) 二极管类型 Q 值 @ Vr, F 工作温度 等级 认证 安装类型 供应商设备封装



















































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:

可变电容(变容二极管、变容器)

图片 型号 库存 价格 数量 规格书 系列 封装/外壳 包装 产品状态 电容 @ Vr, F 电容比 电容比条件 电压 - 反向峰值(最大值) 二极管类型 Q 值 @ Vr, F 工作温度 等级 认证 安装类型 供应商设备封装
HVC300BTRV-E

HVC300BTRV-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

12,000
HVC300BTRV-E

规格书

- - Bulk Active - - - - - - - - - - -
HVC306A8TRU-E

HVC306A8TRU-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

8,000
HVC306A8TRU-E

规格书

- - Bulk Active - - - - - - - - - - -
MV2101G

MV2101G

DIODE TUNING 30V 6.8PF TO92-2

onsemi

5,250
MV2101G

规格书

- TO-226-2, TO-92-2 (TO-226AC) Bulk Obsolete 7.5pF @ 4V, 1MHz 3.2 C2/C30 30 V Single 450 @ 4V, 50MHz 150°C (TJ) - - Through Hole TO-92
MV2109RLRA

MV2109RLRA

VARIABLE CAPACITANCE DIODE

onsemi

2,000
MV2109RLRA

规格书

- TO-226-2, TO-92-2 (TO-226AC) Bulk Active 36.3pF @ 4V, 1MHz 3.2 C2/C30 30 V Single 200 @ 4V, 50MHz - - - Through Hole TO-92
SVC386T-AL

SVC386T-AL

SILICON DIFFUSED JUNCTION TYPE C

onsemi

266,400

-

- - Bulk Active - - - - - - - - - - -
SVC230-TB-E

SVC230-TB-E

DIODE FM VARICAP TWIN VR 8V CP

onsemi

3,159
SVC230-TB-E

规格书

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete 28.2pF @ 8V, 1MHz 1.75 C2/C8 16 V 1 Pair Common Cathode 100 @ 3V, 100MHz 125°C (TJ) - - Surface Mount 3-CP
BBY5603WE6327HTSA1

BBY5603WE6327HTSA1

DIODE TUNING 10V 20MA SOD-323

Infineon Technologies

6,046
BBY5603WE6327HTSA1

规格书

- SC-76, SOD-323 Tape & Reel (TR) Obsolete 12.1pF @ 4V, 1MHz 3.3 C1/C3 10 V Single - -55°C ~ 150°C (TJ) - - Surface Mount PG-SOD323-3D
SVC386T-AL-SY

SVC386T-AL-SY

SILICON DIFFUSED JUNCTION TYPE C

Sanyo

14,281

-

- - Bulk Active - - - - - - - - - - -
BBY5305WH6327XTSA1

BBY5305WH6327XTSA1

DIODE TUNING 6V 20MA SOT323

Infineon Technologies

2,753
BBY5305WH6327XTSA1

规格书

- SC-70, SOT-323 Tape & Reel (TR) Obsolete 3.1pF @ 3V, 1MHz 2.6 C1/C3 6 V 1 Pair Common Cathode - -55°C ~ 125°C (TJ) - - Surface Mount PG-SOT323
HVU358TRF-E

HVU358TRF-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

105,000
HVU358TRF-E

规格书

- - Bulk Active - - - - - - - - - - -
HVD359KRF-E

HVD359KRF-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

96,000

-

- - Bulk Active - - - - - - - - - - -
HVU358-2TRF-E

HVU358-2TRF-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

37,500
HVU358-2TRF-E

规格书

- SC-76, SOD-323 Bulk Active - 0.25 C1/C4 15 V Single - - - - Surface Mount 2-URP
RKV501KK-N#R1

RKV501KK-N#R1

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

24,000

-

- - Bulk Active - - - - - - - - - - -
SVC272-TL-E-SY

SVC272-TL-E-SY

DIFFUSED JUNCTION TYPE SILICON V

Sanyo

12,000
SVC272-TL-E-SY

规格书

- 3-SMD, Flat Leads Bulk Active 18.55pF @ 8V, 1MHz 2.3 C2/C8 16 V 1 Pair Common Cathode 150 @ 2V, 100MHz 125°C (TJ) - - Surface Mount 3-MCPH
BBY6605WE6327

BBY6605WE6327

VARIABLE CAPACITANCE DIODE

Infineon Technologies

9,746
BBY6605WE6327

规格书

- SC-70, SOT-323 Bulk Active 13.5pF @ 4.5V, 1MHz 5.41 C1/C4.5 12 V 1 Pair Common Cathode - -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
HVC355BTRF-E

HVC355BTRF-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

9,648,000
HVC355BTRF-E

规格书

* - Bulk Obsolete - - - - - - - - - - -
HVL358C1KRF-E

HVL358C1KRF-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

1,440,000
HVL358C1KRF-E

规格书

- - Bulk Active - - - - - - - - - - -
HVC355B7KRF-E

HVC355B7KRF-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

456,000
HVC355B7KRF-E

规格书

* - Bulk Obsolete - - - - - - - - - - -
HVC355B6TRF-E

HVC355B6TRF-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

376,000
HVC355B6TRF-E

规格书

* - Bulk Obsolete - - - - - - - - - - -
HVL358CMKRF-E

HVL358CMKRF-E

VARIABLE CAPACITANCE DIODE

Renesas Electronics Corporation

280,000
HVL358CMKRF-E

规格书

- - Bulk Active - - - - - - - - - - -
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