| 图片 | 型号 | 库存 | 数量 | 规格书 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管类型 | 技术 | 电压 - 反向峰值(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 电流 - 反向漏电 @ Vr | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BU1010-E3/51BRIDGE RECT 1PHASE 1KV 3.2A BU Vishay General Semiconductor - Diodes Division |
6,626 |
|
规格书 |
- | 4-SIP, BU | Bulk | Active | Single Phase | Standard | 1 kV | 3.2 A | 1.05 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
|
BU1206-E3/51BRIDGE RECT 1PHASE 600V 3.4A BU Vishay General Semiconductor - Diodes Division |
6,077 |
|
规格书 |
- | 4-SIP, BU | Bulk | Active | Single Phase | Standard | 600 V | 3.4 A | 1.05 V @ 6 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
|
BU1208-E3/51BRIDGE RECT 1PHASE 800V 3.4A BU Vishay General Semiconductor - Diodes Division |
8,506 |
|
规格书 |
- | 4-SIP, BU | Bulk | Active | Single Phase | Standard | 800 V | 3.4 A | 1.05 V @ 6 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
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BU1210-E3/51BRIDGE RECT 1PHASE 1KV 3.4A BU Vishay General Semiconductor - Diodes Division |
6,301 |
|
规格书 |
- | 4-SIP, BU | Bulk | Active | Single Phase | Standard | 1 kV | 3.4 A | 1.05 V @ 6 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
|
BU1006A-M3/51BRIDGE RECT 1PHASE 600V 10A BU Vishay General Semiconductor - Diodes Division |
3,989 |
|
规格书 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 600 V | 10 A | 1.1 V @ 5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
|
BU1006-M3/51BRIDGE RECT 1PHASE 600V 10A BU Vishay General Semiconductor - Diodes Division |
7,043 |
|
规格书 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 600 V | 10 A | 1.05 V @ 5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
|
BU1008A-M3/51BRIDGE RECT 1PHASE 800V 10A BU Vishay General Semiconductor - Diodes Division |
5,246 |
|
规格书 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 800 V | 10 A | 1.1 V @ 5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
|
BU1008-M3/51BRIDGE RECT 1PHASE 800V 10A BU Vishay General Semiconductor - Diodes Division |
3,102 |
|
规格书 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 800 V | 10 A | 1.05 V @ 5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
|
BU1010A-M3/51BRIDGE RECT 1PHASE 1KV 10A BU Vishay General Semiconductor - Diodes Division |
5,773 |
|
规格书 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 1 kV | 10 A | 1.1 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |
|
|
BU1010-M3/51BRIDGE RECT 1PHASE 1KV 10A BU Vishay General Semiconductor - Diodes Division |
9,561 |
|
规格书 |
- | 4-SIP, BU | Tray | Active | Single Phase | Standard | 1 kV | 10 A | 1.05 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ BU |